ohmic resistance

英

美

欧姆律电阻

计算机

英英释义

noun

• a material's opposition to the flow of electric current
  Synonym:electric resistanceelectrical resistanceimpedanceresistanceresistivity

双语例句

• The ohmic base resistance of bipolar transistor introduced in EM_2 Model is a very important parameter.
  在双极型晶体管EM2模型参数中引入的基极电阻r'b是重要的也是较难测量的参数之一。
• Various methods to reduce the heat effect of Ni/ MH battery were summarized, such as decreasing ohmic resistance and charge polarization, increasing O_2 evolving over-potential, reducing O_2 recombination, heat dissipation and charge monitoring.
  总结了各种降低MH/Ni电池热效应的方法，包括降低电池欧姆电阻、减小充电极化、提高氧气析出过电位、减少氧气复合以及散热和充电控制等。
• If there is a large contact resistance between the electrode and the semiconductor film, the performance of devices would be significantly decreased due to heat or poor contact. Therefore, ohmic contact with low resistance and thermal stability is very critical.
  如果接触电极和半导体之间存在较大的接触电阻，那么器件的性能就会由于散热或者接触不良而显著下降，因此获得低电阻、热稳定的欧姆接触非常关键。
• Howevers, there are significant barriers to intermediate temperature SOFC: electrolyte ohmic resistance and electrode overpotential, especially cathode overpotential.
  但随着工作温度的降低，电解质欧姆电阻和电极极化电阻增大，而阴极的极化电阻增大尤为明显。
• If the ohmic resistance is medium, the 1.2 V plateau decay is commended by both ohmic and non ohmic polarizations.
  欧姆内阻较大的电池，1.2V放电电压平台主要由欧姆极化控制；
• Reduce Ohmic Contact Resistance to p-GaN Using InGaN/ AlGaN Superlattice
  用InGaN/AlGaN超晶格降低p-GaN欧姆接触电阻
• By lots of testing and analyses time after time, Ohmic contact is formed Between Au and ZnO and the related resistance is about 27 Ω.
  对ZnO六棱微米管的性能进行初步探索，经过大量、反复的分析测试，证实了Au/ZnO形成的金属与半导体的接触是欧姆接触，且电阻较小，约为27Ω；
• When SiC devices operate at the high temperature and high power, thermodynamically stable ohmic contacts with low specific contact resistance are important, since parasitic resistances generally limit or even jeopardize device operation.
  对于器件的欧姆接触，低比接触电阻和高稳定性是决定器件性能的两个重要因素。
• In order to make the application in the device better, the ohmic contact with low resistance between the electrode and p-type and n-type ZnO films needs to be studied and prepared.
  为了更好的实现其在器件方面的应用，需研究制备出适合于p型和n型ZnO薄膜的低阻欧姆接触电极。
• Study on the Ohmic Contact Resistance of n-type 3C-SiC Grown on Si Substrate
  Si上外延的n型3C-SiC欧姆接触研究